The Cramium secure solution will utilize unique resistive RAM technology for its secure non-volatile storage and processing, which is inherently more secure that other memories such as Flash (Charge Based) memory. This memory, embedded in the semiconductor, is resistant to reverse engineering and physical attacks which are essential requirements for today’s secure systems and applications.
Due to its structure, the ReRAM cell itself is inherently resistant to physical hacking targeting sensitive information and data stored in memory. It is not feasible to externally read the physical ReRAM cell electrically, magnetically or through imaging techniques even after delamination of the silicon. Also, the ReRAM cell is fabricated vertically in the silicon, is located between layers of metal, and has a very small cross-sectional area, making it virtually impossible to measure its resistance in attempts to read its stored contents. When the ReRAM PUF cell (Physical Unclonable Function) is also used, it possesses many of the same secure characteristics as the memory. Cramium plans on using a version of ReRAM which utilizes stochastic electro-chemical ionic movement that is more difficult to analyze or useful for inferring the contents of the memory.. The ReRAM-based cell microstructure changes are unclonable, and unlikely to be detected using invasive techniques such as FIB (Focused Ion Beam) or SEM (Scanning Electron Microscopy) or TEM (Transmission Electron Microscopy) sampling.
By combining the ReRAM memory and PUF with its unique secure architecture, Cramium’s technology will enable a new class of secure computing, addressing many of the deficiencies of alternative implementations.
